Power electronics is concerned with the regulation and conversion of electric power for such applications as motor drives, electric vehicles, data centers, and the grid. Today, power devices made of silicon are the mainstream but they are approaching fundamental performance limitations, rendering the commercial power systems bulky and inefficient. New generations of power devices based on a new ultrawide-bandgap semiconductor—gallium oxide—are poised to transform future power systems by increasing both the power density and power conversion efficiency at the device level. Ion implantation doping of gallium oxide offers unique opportunities for realizing novel device structures, yet this technique generally requires high-temperature processing to manage the structural quality of the crystal and optimize the electrical properties of the device. The main objective of this project is to develop robust thermal processes pertinent to the design and engineering of ion-implanted gallium oxide devices.