The relentless increase in power density and integration levels of AI chips and advanced packaging has intensified the problem of localized hotspot formation. Addressing this problem requires thermal management materials that simultaneously provide high in‑plane thermal conductivity, and electrical insulation. This project aims to develop an electrically safe, ultrathin heat spreader based on boron carbon nitride (BCN) synthesized via chemical vapor deposition (CVD). By tuning the BCN carbon concentration during CVD growth, the BCN films can achieve tunable thermal conductivities while maintaining high electrical resistivity, overcoming the short‑circuit risks of existing heat spreaders (e.g., graphite) and the limited heat spreading of conventional insulators such as hexagonal boron nitride (hBN). The project will deliver an optimized BCN film prototype integrated into test chips, validated through real‑time hotspot measurements. The work will also include COMSOL simulations to compare on‑chip temperature distributions between BCN with different carbon concentrations and existing heat spreading materials. This enhanced heat spreading capability contributes to reduced channel material damage, prolonged device lifetimes, and decreased electronic waste, thereby enabling sustainable high‑performance computing across chip applications.