The project will focus on devising a strategy for the spatial introduction of p- and n-types doping within monolayer semiconducting materials. Precise spatial control of p- and n-type doping within these materials holds significant implications for industrial applications, particularly in addressing the limitations of silicon-based chip technology. Moreover, the investigation will delve into the electronic attributes, specifically focusing on the Field-Effect Transistor (FET) dynamics. This methodological approach is designed to offer an in-depth understanding of the influence of structural defects within materials on carrier conductivity. The team will focus on (a) the synthesis of monolayer MoS2, (b) spatial p- and n-type defects introduction, and (c) the material characterization for structural analysis. At the end, the team aims to fabricate a prototype encompassing a diode of a p-n junction.

Students will apply for this UROP project individually, but accepted applicants will form a team and work together. The team will be guided by a postgraduate student throughout the project duration. Commitment of at least 2 continuous semesters is required.